ZSX Primus400

Overview

ZSX Primus400 is a sequential wavelength dispersive X-ray fluorescence (WDXRF) spectrometer designed to handle very large and/or heavy samples. It accepts samples up to 400 mm diameter, 50 mm thick and 30 kg mass and was built as a "large sample" variant of WDXRF instrumentation. The system offers a variable measurement spot from 30 mm to 0.5 mm diameter with 5-step automatic selection, mapping capability with multi-point measurements to check sample uniformity, and an adaptable sample adapter system using optional made-to-order adapter inserts. An optional real-time camera with special lighting allows the analysis area to be viewed within the instrument software. Analytical capabilities include analysis of elements from Be through U, elemental composition ranges from ppm to tens of percent, and thickness measurement from sub Å to mm. Technique and technology details: Wavelength dispersive X-ray fluorescence, tube below sequential WDXRF, 3 or 4 kW sealed X-ray tube, 48-position autosampler, vacuum, r-θ stage/mapping. Options and accessories listed include He-flush, additional analyzing crystals, various sample holders, camera, and Fundamental Parameters software for thin film analysis; computer interface is via an external PC running MS Windows OS with ZSX software. Physical and electrical specifications: 1376 (W) x 1439 (H) x 890 (D) mm; Mass: Approx. 800 kg (core unit); Power requirements: 3×, 200 VAC 50/60 Hz, 8 kW. The instrument complies with SEMI and CE marking and offers optional diffraction peak interference rejection for single-crystal substrates. Explicitly supported applications include analysis of sputtering target composition, magnetic disks, multilayer film metrology, and elemental analysis of large samples. The instrument is positioned for quality control tasks that require multipoint mapping or verification of the analysis area via camera. Material- and process-specific applications listed include isolation films (SiO2, BPSG, PSG, AsSG, Si3N4, SiOF, SiON), high-k and ferro-dielectric films (PZT, BST, SBT, Ta2O5, HfSiOx), metal films (Al-Cu-Si, W, TiW, Co, TiN, TaN, Ta-Al, Ir, Pt, Ru, Au, Ni), electrode and doped films (doped poly-Si with B, N, O, P, As; amorphous-Si; WSix; Pt; As, P doping; trapped inert gases Ne, Ar, Kr; C (DLC)), ferroelectric thin films and memory materials (FRAM, MRAM, GMR, TMR; PCM, GST, GeTe), solder bump composition (SnAg, SnAgCuNi), MEMS thickness and composition (ZnO, AlN, PZT), and SAW device process films and electrodes (AlN, ZnO, ZnS, SiO2 piezo film; Al, AlCu, AlSc, AlTi electrode films).