Furnace Systems—Ultra FN Atmospheric Pressure Oxidation/Anneal

Overview

Furnace Systems—Ultra FN Atmospheric Pressure Oxidation/Anneal is an atmospheric pressure oxidation/anneal furnace that uses a silicon carbide (SiC) chamber and injector combined with a patented slip-on plate to enable high-speed annealing at 1300°C while preventing wafer slippage and warpage. The heater employs a proprietary control algorithm to provide stable control of temperature, pressure and gas flow rate, and SiC chamber parts increase part lifetime to reduce cost of ownership. The system is designed to maximize wafer throughput and includes a fast-cooling unit to shorten process time and increase WPH. - Process temperature: up to 1300°C - Batch processing: 75-100 wafers - Wafer compatibility: 300mm - Quick ramping control heater: keeps the temperature within two limits from the bottom to the top of the heating unit, allowing for precise, consistent temperature control across the entire heating chamber - Fast-cooling unit: shortens process time and increases WPH - Loadports: Four loadports – two automated, two manual - FOUP transfer robot and stocker: Yes - Wafer transfer robot: Yes - Loading area O2 control: Yes - IGS gas supply system: Yes - In situ gas cleaning system: Yes - Absolutely pressure control: Yes - SEMI standard: Yes The Ultra FN is described for high-temperature and high-speed well drive-in and for optimizing post-ion implant annealing using atmospheric pressure annealing and oxygenation to support power semiconductor manufacturing. It supports batch processing of 75-100 wafers and 300mm wafers while using high temperatures and the fast-cooling unit to shorten process times and increase WPH.