TWINSCAN XT:260

Overview

DUV projection lithography system delivering 2x reduction imaging using a mercury vapor light source. Projection optics provide a variable numerical aperture of 0.25–0.35 at 2x reduction. The system is specified with an exposure dose of 340 mJ/cm2 and an optional resolution capability of 400 nm. Throughput is specified at 270 wafers per hour. Maximum supported wafer thickness is 1.7 mm with a typical wafer thickness reference of 775 µm. Alignment capability is described as through‑silicon alignment on through‑silicon vias and other deep‑trench patterns. Designed for wafer‑level lithography tasks that require alignment and exposure through thick substrates, including through‑silicon via (TSV) and deep‑trench patterning workflows. Typical deployment is in production or development fabs where a 270 wafers per hour throughput and an exposure dose of 340 mJ/cm2 meet process‑volume requirements. NA is selectable between 0.25 and 0.35 to allow tradeoffs between resolution and process latitude for different feature sizes and wafer thicknesses; the optional 400 nm resolution makes it suitable for mid‑range DUV patterning needs. The mercury vapor light source and support for up to 1.7 mm wafer thickness should be considered when planning utilities, handling and safety procedures for integration into a production line.