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Kenosistec SrlRIE (reactive ion etching) system

RIE (reactive ion etching) system

Kenosistec Srl

Categories:
Subtractive Manufacturing
Equipment

Model Overview

RIE (reactive ion etching) system employs heavy ion bombardment to damage chemical bonds while radicals chemically react with surface atoms to produce volatile products. The system is designed for dry and high resolution engraving and guarantees processing with a very high degree of uniformity. The...

Technical Specifications

Substrate Portconnected to RF power supply.
Substrate Holdercan be designed to engrave samples with different sizes (from 2 “up to 8” in diameter)
Temperature Rangeit can be heated up to a maximum of 300 ° C and cooled down to a minimum of -20 ° C.
Process DescriptionR.I.E mainly employs processes in which heavy bombardments of ions damage chemical bonds: the radicals chemically react with the atoms exposed on the surface, producing a volatile product.
Production Capacity10-40 wafers per hour.

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