FPA-5550iZ2

Overview

Canon FPA-5550iZ2 is a reduction projection exposure system specified for i-line 365 nm lithography with a reduction ratio of 1:4 and a field size of 26 mm x 33 mm. It supports wafer processing for 200 mm (8 inch) and 300 mm (12 inch) wafers (selection), and uses 6 inch reticles. Nominal resolution is ≦ 350 nm and the optical system provides a variable NA (Numerical Aperture) of 0.57~0.45. Stated overlay performance is SMO ≦18 nm and MMO ≦ *25 nm. Mechanical envelope of the main body is (W) 2,300 x (D) 3,660 x (H) 3,000 mm. Major configurable and service-related options include: Productivity Improvement Option; Overlay Accuracy Improvement Option; Oxygen Concentration Control System; Non-linear Alignment Compensation Function (EAGA-FL); Chemical Filter; Resist Outgas Exhaust Unit; PC Remote Console; Online Function (GEM-1000, GEM-0304); and Pellicle Particle Checker. Options note indicates "* = Options Required" for items marked with an asterisk. Intended for semiconductor wafer lithography in industrial production and manufacturing R&D environments where i-line 365 nm patterning at sub-micron resolution (≦ 350 nm) is required on 200 mm or 300 mm wafers. The 1:4 reduction ratio and 26 mm x 33 mm exposure field define the shot size and layout considerations for step-and-repeat exposure flows. Configuration choices and selected options adapt the tool to specific factory needs: overlay-critical production can use the Overlay Accuracy Improvement Option and the Non-linear Alignment Compensation Function (EAGA-FL); environments with outgassing or airborne contamination can employ the Resist Outgas Exhaust Unit and Chemical Filter; and factory automation/monitoring integration is provided via Online Function (GEM-1000, GEM-0304) and PC Remote Console. The Oxygen Concentration Control System and Pellicle Particle Checker are available for processes sensitive to pellicle and ambient control.