GC-TD804 Silicon Carbide Chamfering Machine

Overview

The GC-TD804 Silicon Carbide Chamfering Machine is suitable for edge chamfering processing of silicon carbide wafers and is compatible with 4-inch, 6-inch and 8-inch wafers; it can process the OF (Orientation Flat) surface and offers an optional NOTCH groove processing function. - Host size and weight: 2,250 (L)*1,650 (W)*2,600 (H) ; 3,000 kg. - Equipment size: 2,250 (W)*1,650 (D)*2,600 (H). - Workstation: Dual workstation; Loading/unloading section: Number of boxes: 4; Number of slots: 25 (adjustable); Wafer thickness: 300 cm~1,500 cm; Wafer size: 4*6*8 in. Grinding and measurement specifications include X/Y/Z axis accuracy: b1 1 cm; ceramic suction cup plane accuracy: b2 3 cm; accuracy of the grinding bench spindle end face and radial direction: b1 1 cm; accuracy of the grinding wheel spindle end face and radial direction: b1 1 cm. The grinding wheel outer diameter is a6 202 mm, inner diameter a6 30 mm, thickness 20 mm; rotation speed of the grinding wheel is 0-4,000 r/min (according to customer's demands) and rotation speed of the Notch grinding wheel is 0-100,000 r/min (according to customer's demands). Grinding wheel modes include T, R, TT, RR, TR, etc. Wafer thickness measurement (non-contact or contact type) has repeated-measurement accuracy of b1 2 cm at one center point. Cleaning method: Rotation cleaning; Drying method: Centrifugal drying. Designed for edge chamfering of silicon carbide wafers, the GC-TD804 supports 4-inch, 6-inch and 8-inch wafers with thicknesses from 300 cm to 1,500 cm and can process the OF surface and optional NOTCH grooves. The machine provides wafer thickness measurement (non-contact or contact) with repeated accuracy of b1 2 cm at one center point and includes rotation cleaning and centrifugal drying as part of the processing flow. The product documentation states the equipment offers high processing accuracy, high processing efficiency and stable operation.