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Tescan QuiiN™
TESCAN GROUP, a.s. (TESCAN)
Model Overview & Specs
Overview
Tescan QuiiN (Quantum Ion Implanter at Nanoscale) is an ion beam system designed for implantation applications and precise placement of ions into material structures. The system offers an optional SEM column with resolution at 25 keV: 4 nm. Two FIB column options are specified: iVeloce plasma column and Veloce LMAIS column. The iVeloce plasma column supports an ion source plasma column (Xe+, O2+, Ar+, He+, N+) including a Wien filter, with maximum filtered beam current: 35 nA (Plasma source) and resolution at 30 keV: 40 nm. The Veloce LMAIS column (AuGe / AuSi) includes a Wien filter, has maximum filtered beam current: 15 nA (LMAIS) and resolution at 30 keV: 5 nm. Chamber specifications include number of ports: 20+, maximum sample size: 180 180 92 mm, and Main Chamber Vaccum: < 9x10-3 Pa, with Sample Main Chamber Introduction: < 5 min. An optional heating stage (FurnaSEM 1000) provides maximum temperature: 950 C, closed-loop cooling control and programmable temperature slope from 0.01 C/s to 3 C/s. System-level features called out in the product text include fine control of acceleration voltage with an energy range from 3 keV to 30 keV, an ultra sensitive current measurement system for dose adjustment, Pegasus GUI for tailored experiments and point-based milling strategies, and detection using YAP scientillators. The product description explicitly positions Tescan QuiiN for implantation applications and for advanced research in quantum computing and semiconductor technologies. It is presented for precise region localization and controlled dose implantation of selected ions and gases using electrostatic SEM and advanced FIB. Described use capabilities include isotope selection via the Wien filter, in-situ annealing to temperatures up to 950 C to activate dopants and repair lattice damage, switching between species (N, Ar, O, He, Xe or gas mixtures) or (Au, Ge, Si) from the same source, implantation of a single ion of any species by ultra sensitive current measurement, and SEM-in-coincidence with the FIB column to locate areas of interest and avoid unintended implantation.
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