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Cleaning Systems—Ultra C wb
ACM Research
Model Overview & Specs
Overview
The Ultra C wb (Ultra Clean wet bench) is a wet batch cleaning system designed for 200mm and 300mm wafer wet batch processes. It is described as environmentally friendly due to reduced process times and less chemical waste compared to single wafer wet clean equipment. The tool reuses chemicals through re-circulation/filtration, which reduces both chemical and post-treatment waste disposal costs. The system can run various chemical cleaning processes including SPM, DHF, HNO3, HF, SC1, SC2, and H3PO4. It supports processes such as SPM, quick dump rinse (QDR), standard RCA cleaning, multi clean and rinse (MCR) baths with DIW overflow rinse, and offers an ATOMO dryer integrated with vaporized isopropyl alcohol (IPA). An option is available to improve cleaning with SC1 and SC2 megasonic functions and a Proven Megasonic bath is listed as an option. Features include reduced cross-contamination risk with a face to face EFEM option, excellent film strip removal, cassette-less wafer handling, independent processing modules, an advanced drying module, and precise cleaning and rinsing flow control. Performance specifications state it achieves high throughput of 350 wafers per hour for typical PR strip processes and is currently qualified at 60nm. Customization and options include IPA dry, Multi Clean & Rinse bath (MCR), Proven Megasonic bath, and a range of chemistry options: Sulfuric Peroxide Mixture (SPM); Standard Clean 1 (SC1); Standard Clean 2 (SC2); Hydrofluoric acid (HF); HNO3/HF mixture; Buffered Oxide Etch (BOE); Phosphoric acid (H3PO4); and other process chemicals. The system is customized and configured to customer specification. The Ultra C wb is used for wet batch cleaning applications in IC wafer processing and supports SPM photoresist stripping, pre-furnace cleans, post-etch cleans, post-implant (Post IMP) cleans, and post-CMP cleans. It is also indicated for nitride removal, oxide etch, and wafer reclaim strip of nitride, poly, oxide, and metal. The tool can be configured for pre-deposition (pre-dep) cleans and for typical high-throughput PR strip processes (350 wafers per hour). Batch processing is presented as suitable even for advanced node applications, and the system is intended to reduce the relatively long times for removing particles from fine features while eliminating cross-contamination through independent modules and controlled drying and rinsing.
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