9800 TC _next_

Overview

The 9800 TC_next_ is a thermo compression bonding system designed for next‑gen die attach for chiplet & interposer packages. It features an Advanced Micro‑Inert Chamber optimized for minimal gas consumption and provides an inert environment via an N2 micro chamber (< 100 ppm O2 @ 75 l/min). High-resolution vision systems, thin die capability, and a configurable material feeding system are included; the system is modular and upgradeable with a dual‑module option for high‑volume production or a single‑module configuration for R&D. Bonding forces are -15 N up to 500 N with an optional upgrade to 1 kN, bond head temperature 450°C (500°C roadmap), bond head heating rate > 400°C/sec from 100°C to 400°C, and bond head cooling rate > 75°C/sec from 350°C to 150°C. Static thermal control is ± 1°C, dynamic thermal variation < 5°C, static thermal uniformity ± 2.5°C, and substrate wafer temperature capability is 250°C ± 5°C @ 3s over 300 mm. Placement and motion capabilities include X & Y accuracy 0.5 µm @3s, theta accuracy 1 mdeg @3s, worst case corner (WCC) 0.8 µm @3s, bond head Z control ± 1 µm @3s, and tilt control < 1 µm (< 2 µm for 70 mm heater size). Material handling supports substrate wafers up to 12" from FOUP (3 x FOUP ports) and quarter panels 300 x 300 mm with substrate wafer thickness 0.5 mm to 2.0 mm; component handling includes automatic JEDEC tray handling via FOUP, T&R feeders 8 mm up to 56 mm with Max. 60 x 8 mm feeder (30 pcs. per side), P&P wafer handling (up to 15" frames) via FOUP, non‑flip and flip die transfer, die size range 0.3 x 0.3 mm up to 70 x 70 mm, and die thickness < 25 µm up to 1.1 mm. Additional data: UPH (bond time 1 sec) up to 2500 (product/process dependent), cleanroom class ISO 5 / Class 100 (FS 209E), footprint 6.08 m2, and weight Approx. 7.8 tons (configuration dependent). The 9800 TC_next_ is specified for die attach using thermo compression bonding for chiplet and interposer packages and is described as suitable for advancing bump pitch scaling plans. Its thin die capability and support for a wide die size and thickness range enable use with very small dies (0.3 x 0.3 mm) up to larger die formats (70 x 70 mm) and die thicknesses from < 25 µm to 1.1 mm. The system’s modular design supports R&D use in a single‑module configuration and high‑volume production in a dual‑module configuration, and its software and automation features (bond traces and trace viewer, bin code matched bonding, easy machine calibration via SW assistants, inline process monitoring and control, parameter provider via SECS/GEM, E142 map handling, and full factory automation for Industry 4.0) support integration into automated production and process‑monitoring workflows.