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Angstrom Engineering Inc.LOW PRESSURE CHEMICAL VAPOR DEPOSITION SYSTEM

LOW PRESSURE CHEMICAL VAPOR DEPOSITION SYSTEM

Angstrom Engineering Inc.

Categories:
Batch PECVD Systems
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Model Overview

Reactor: Interchangeable quartz tube chamber available in Ø 50 mm–Ø 200 mm sizes; accommodates individual or multiple substrates up to 150 mm x 150 mm. Upstream end flange includes quick connections to the gas manifold; downstream end flange includes quick connections to pumping and gauging. Temper...

Technical Specifications

ReactorØ 50 mm-Ø 200 mm quartz tube chamber Interchangeable Quartz tubes of various sizes as required Accommodates Individual or multiple substrates up to 150 mm x 150 mm Upstream end flange with quick connections to gas manifold Downstream end flange with quick connections to pumping and gauging
Operation & SafetySafety circuit (hardware and software) Flammable gas sensor (H2) Enclosed frame and safety guarding PC / PLC controller including Windows-based recipe and control software Editable recipes, data logging, and password-protected access control
Software / ControlPC/PLC-controlled recipes for single, batch, or automated processes. Advanced data logging and process tracking High-resolution control, independent control of multiple chambers, automatic PID control loop tuning
Temperature/pressure ControlThe Low Pressure Chemical Vapor Deposition system features a single-zone quartz lamp furnace with a 6-inch uniform temperature zone Auto-tuning feature provides very stable temperature control Rapid heating to 1100°C in 10 minutes Rapid cooling from 1100°C to 800°C in 2 minutes Downstream pressure control 100mTorr to 500Torr using a throttling VAT butterfly valve Up to 12 mass flow controllers

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